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Tunneljunctions containing complex transition metals yield the promise of future devices. In particular the combination of ferroelectric and ferromagnetic materials and the coupling between these orders might open the path for novel functionality. We performed ab-initio calculations using the full-potential augmented plane wave method and the Green function embedding technique to calculate the electronic structure of these tunneljunctions. Our codes enable the calculation of the complex bandstructure of the barrier material as well as the transmission of the junction depending on the details of interface. |
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