Radiation pressure induced mechanical oscillations in ultra-high Q chip-based microcavities

Tobias Kippenberg

Max Planck Institute of Quantum Optics, Garching, Germany

A novel processing method has been applied to create optical microcavities having Q factors as high as 500 million on silicon wafers. These devices open up many new research opportunities in lab-on-chip applications. After describing the processing and passive optical properties of these devices, the consequences of resonant energy buildup in a microscale, ultra-high-Q system will be described. Whereas in macroscopic resonators the influence of radiation pressure is weak and only appreciable at high power levels, the mutual coupling of optical and mechanical modes is significantly enhanced in optical microcavities which simultaneously exhibit ultra-high-Q optical modes and high-Q mechanical modes in the RF-frequency range. This has made it possible to observe for the first time the excitation of mechanical eigenmodes via the radiation pressure of the confined photons[1]. These results confirm for the first time the work of V.B. Braginsky, who theoretically proposed this effect - termed parametric oscillation instability - in the context of the Laser gravitational observatory (LIGO).

1. Kippenberg, T.J., H. Rokhsari, T. Carmon, A. Scherer, and K.J. Vahala, Analysis of Radiation-Pressure Induced Mechanical Oscillation of an Optical Microcavity. Physiscal Review Letters, 2005. 95: p. 033901.

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