Transient THz emission by Bloch electrons in semiconductor superlattices

Gérald Bastard

ENS, Laboratoire Pierre Aigrain, Paris, France

We analyze the time dependent signal emitted by Bloch oscillating electrons in semiconductor superlattices. The carriers are photo-created. We first analyze the emitted signal using a semi-classical Boltzmann equation and find that it provides a good description down to about 1ps from the excitation. In a second approach, we analyze more accurately the photo-created electrons and holes while the relaxation is empirically described.

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